FÄ°Z638 - SEMICONDUCTOR PHYSICS II
Course Name | Code | Semester | Theory (hours/week) |
Application (hours/week) |
Credit | ECTS |
---|---|---|---|---|---|---|
SEMICONDUCTOR PHYSICS II | FÄ°Z638 | Any Semester/Year | 3 | 0 | 3 | 6 |
Prequisites | Undergraduate level solid state physics and/or semiconductor physics and technology. | |||||
Course language | Turkish | |||||
Course type | Elective | |||||
Mode of Delivery | Face-to-Face | |||||
Learning and teaching strategies | Lecture Question and Answer | |||||
Instructor (s) | Assigned by Department of Physics Engineering | |||||
Course objective | Giving basic semiconductor physics, for understanding fundamental principles of current electronic devices, lecturing technological applications. | |||||
Learning outcomes |
| |||||
Course Content | ? Metal-Semiconductor contacts. ? Junction Field Effect Transistors (JFET). ? Metal semiconductor field effect transistors (MESFET), Normally off MESFET. heterojunction MESFETs. ? Metal-oxide-semiconductor (MOS) diode. ? MOSFETs. MOSFET types: n- ve p-channel enhancement and depletion MOSFETs. ? Microwave devices: tunnel diode, IMPATT diode, BARITT diode, Transferred electron device (TED). ? Photonic devices: light emitting diodes (LED), semiconductor laser diodes (LD), photoconductors, homojunction, heterojunction and avalanche photodiodes. | |||||
References | ? Advanced Semiconductor Fundamentals (Modular Series on Solid State Devices: vol VI) Robert F. Pierret, 2nd edition (2003), Gerold W.Neudeck, Robert, F. Pierret (Series Eds.). Pearson Inc. ? Semiconductor Devices: Physics and Technology, 3rd Ed. S.M.Sze, M-K Lee, Wiley (2012). ? Modern Semiconductor Devices for Integrated Circuits, Chenming Clavin Hu, 2010, Prentice Hall. ? Fundamentals of Semiconductors: Physics and Materials Properties (Series: Graduate Texts in Physics), YU, P. ve Cardona, M. 4th ed. 2010, ISBN 978-3-642-00709-5 |
Course outline weekly
Weeks | Topics |
---|---|
Week 1 | Metal-Semiconductor contacts. Junction Field Effect Transistors (JFET). |
Week 2 | Metal semiconductor field effect transistors (MESFET), Normally off MESFET. heterojunction MESFETs. |
Week 3 | MESFETs. (Cont.d), MOS diode. |
Week 4 | MOSFETs., types of MOSFETs : n- ve p-channel enhancement and depletion MOSFETs. |
Week 5 | MOSFETs. (Cont.d). |
Week 6 | Microwave devices. Tunnel diode, IMPATT diode, BARITT diode. |
Week 7 | Microwave devices.: Transferred electron device (TED), Light emitting diodes: LED technology. |
Week 8 | Light emitting diodes: LED technology. (Cont.d) |
Week 9 | 1st Midterm Examination |
Week 10 | Solid state lasers: Laser diodes. |
Week 11 | Solid state lasers: Laser diodes. (Cont.d) |
Week 12 | Photodetectors. |
Week 13 | Photodetectors. (Cont.d) |
Week 14 | 2nd Midterm examination |
Week 15 | Preparation for final exam. |
Week 16 | Final exam |
Assesment methods
Course activities | Number | Percentage |
---|---|---|
Attendance | 0 | 0 |
Laboratory | 0 | 0 |
Application | 0 | 0 |
Field activities | 0 | 0 |
Specific practical training | 0 | 0 |
Assignments | 4 | 10 |
Presentation | 0 | 0 |
Project | 0 | 0 |
Seminar | 0 | 0 |
Midterms | 2 | 40 |
Final exam | 1 | 50 |
Total | 100 | |
Percentage of semester activities contributing grade succes | 6 | 50 |
Percentage of final exam contributing grade succes | 1 | 50 |
Total | 100 |
WORKLOAD AND ECTS CALCULATION
Activities | Number | Duration (hour) | Total Work Load |
---|---|---|---|
Course Duration (x14) | 14 | 3 | 42 |
Laboratory | 0 | 0 | 0 |
Application | 0 | 0 | 0 |
Specific practical training | 0 | 0 | 0 |
Field activities | 0 | 0 | 0 |
Study Hours Out of Class (Preliminary work, reinforcement, ect) | 14 | 6 | 84 |
Presentation / Seminar Preparation | 0 | 0 | 0 |
Project | 0 | 0 | 0 |
Homework assignment | 4 | 3 | 12 |
Midterms (Study duration) | 2 | 12 | 24 |
Final Exam (Study duration) | 1 | 18 | 18 |
Total Workload | 35 | 42 | 180 |
Matrix Of The Course Learning Outcomes Versus Program Outcomes
D.9. Key Learning Outcomes | Contrubition level* | ||||
---|---|---|---|---|---|
1 | 2 | 3 | 4 | 5 | |
1. Combines mathematics, science and engineering knowledge in a multidisciplinary manner and implement into modern technological and scientific advanced research. | X | ||||
2. Accesses, interprets, and implements information by doing in depth applied research for technological applications. | X | ||||
3. Develops original models and designs methods to solve problems by using relevant software, hardware, and modern measurement tools. | X | ||||
4. Accesses information by doing research in certain fields, share knowledge and opinions in multidisciplinary work teams. | X | ||||
5. Implements modeling and experimental research; solves encountered complex problems. | |||||
6. Knows and follows recent improvements in the field, utilize new information to solve technological complex problems. Develops and plans methods to solve technological problems in an innovative manner. | |||||
7. Follows recent studies in the field, presents results in national and international meetings. | X | ||||
8. Knows advanced level Turkish and at least one foreign language to be able to present recent results. | X | ||||
9. Uses advanced communication tools related to technological methods and software. | X | ||||
10. Protects social, scientific, and ethical values while collecting and implementing, data and presenting results in scientific meetings. | X |
*1 Lowest, 2 Low, 3 Average, 4 High, 5 Highest